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OptoElectronic Materials

Landau Theory for PCMs

Matthias Thielen, Razvan A. Nistor, Guillermo Beltramo, Margret Giesen, and Martin H. Müser,
Landau theory for stress-induced, order-disorder transitions in phase change materials ,
Phys. Rev. B 89, 054101 (2014). (accepted version)
DOI: 10.1103/PhysRevB.89.054101



Crystallization pressure of phase change materials

D. Shakhvorostov and M. H. Müser,
Effect of dopant size and dopant concentration on the crystallization pressure of phase change materials: The role of local order and non-local interactions,
EPL 93, 36002 (2011); (submitted version).



Rationalizing phase change materials from elementary principles

M. H. Müser,
Rationalizing phase change materials from elementary principles,
Eur. Phys. J. B 74, 291-302 (2010) (accepted version), DOI:  (10.1140/epjb/e2010-00072-y)



Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials

D. Shakhvorostov, R. A. Nistor, L. Krusin-Elbaum, G. J. Martyna, D. M. Newns, B. G. Elmegreen, X. Liu, Z. E. Hughes, S. Paul, C. Cabral Jr., S. Raoux, D. B. Shrekenhamer, D. N. Basov, Y. Song, and M. H. Müser,
Evidence for electronic gap-driven metal-semiconductor transition in phase-change materials,
Proc. Natl. Acad. Sci. USA 106, 10907-10911 (2009).
DOI information: 10.1073/pnas.0812942106.